| 发明名称 |
Methods for bonding semiconductor wafers |
| 摘要 |
A method of bonding a cap wafer to a device wafer includes heating the device wafer and the cap wafer in the chamber, cooling the device wafer and the cap wafer in the chamber, pressurizing the chamber, introducing gas into the chamber while the chamber is pressurized to accelerate a rate of one of a group consisting of the heating and the cooling, and applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer. |
| 申请公布号 |
US9418830(B2) |
申请公布日期 |
2016.08.16 |
| 申请号 |
US201414318063 |
申请日期 |
2014.06.27 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
Hanna Jeffrey D.;Steimle Robert F.;Turner Michael D. |
| 分类号 |
H01L21/02;B81C1/00 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of bonding, in a chamber, a cap wafer to a device wafer, comprising:
heating the device wafer and the cap wafer in the chamber; cooling the device wafer and the cap wafer in the chamber; pressurizing the chamber by introducing gas into the chamber to accelerate a rate of one of a group consisting of the heating and the cooling; applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer, and after the cooling, raising a temperature of the chamber to enhance forming the bond, wherein the bond is a eutectic bond. |
| 地址 |
Austin TX US |
