INFRARED LIGHT-EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To provide an infrared light-emitting diode with higher luminous efficiency.SOLUTION: The infrared light-emitting diode comprises: a substrate 10; a plurality of compound semiconductor stack portions 20 formed on a substrate 10; an insulating layer 30 formed on the plurality of compound semiconductor stack portions 20 and having a first opening 31 that exposes a mesa upper part 22 and a second opening 32 that exposes a mesa lower part 23; and a wiring portion 40 that electrically connects between one compound semiconductor stack portion 20 and another compound semiconductor stack portion 20 through the first opening 31 of the one compound semiconductor stack portion 20 and the second opening 32 of the another compound semiconductor stack portion 20. When the compound semiconductor stack portion 20 is viewed from above, the area of the first opening 31 is 20% or more of the area of the mesa upper part 22, and a length W1 of the mesa upper part 22 in a first direction corresponding to the shortest distance D between the first opening 31 and the second opening 32 is smaller than a length L1 of the mesa upper part 22 in a second direction orthogonal to the first direction in the plan view.SELECTED DRAWING: Figure 2