| 摘要 |
PURPOSE:To increase the extending width of a depletion layer on the surface of a p-n junction, and to elevate withstanding voltage by forming a large number of insular regions having a conduction type reverse to a low concentration region onto the surface in the vicinity of the p-n junction in the region on the low concentration side, where the p-n junction is shaped, without electric connections. CONSTITUTION:A large number of p-type regions 13 are formed insularly around a high-concentration p-type region 12 on the surface of a low-concentration n-type region 11. A p<+> layer 12 is shaped into a high-resistance n-type epitaxial layer 11 formed onto an n<+> type substrate 10 through a diffusion, thus shaping a p-n junction diode. B<+> ions are implanted to a large number of sections five mum square within the periphery of 50mum of the p<+> layer 12, thus forming the low-concentration p-type regions 13. Accordingly, when reverse voltage is applied to the p-n junction diode, an electric field is relaxed at the terminal section of a p-n junction, thus increasing withstanding voltage. |
