| 摘要 |
PURPOSE:To use parallel etching surfaces as they are as reflecting surfaces, and to constitute an integrated optical device easily onto a surface A by obtaining a semiconductor laser, in which each end surface is formed vertically through etching while completely leaving an InP(111)A surface substrate as it is, onto the substrate. CONSTITUTION:An N-AlInAs layer 12, N-InGaAsP 13 and a P-Al0.48In0.52As layer 14 are grown on an N-InP(111)A surface substrate 11 in succession. The semiconductor layers are shaped to a rectangular parallelopiped while several side surface is made perpendicular to an InP(111)A surface when a Br2:HBr:H2O solution is operated. An electrode 15 consisting of Au/Zn/Au or a Ti-Pt-Au alloy and an electrode 16 composed of an AuGe alloy are formed, and a high resistance layer such as an Al0.48In0.52As high resistance layer 17 is shaped to the side surface of the device. Both parallel etching surfaces are used as reflecting surfaces, the electrode 15 is brought to positive charges and the electrode 16 to negative charges, voltage is applied, and currents are brought to a threshold or more, thus changing the InxGa1-x-AsyP1-y layer 13 into an active region, then generating laser light emission.
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