| 摘要 |
PURPOSE: To improve yield, reduce inspection items, and provide a semiconductor acceleration sensor of low cost, by restraining manufacturing irregularity of the film thickness of a cantilever. CONSTITUTION: A silicon thin film layer 5 on an SOT substrate is used as the cantilever 6 of an acceleration sensor. A silicon oxide film layer 4 is used as an etching stopper layer and an air-damper. A base silicon layer 3 is used as a weight 1 and a retainer 2. Thereby irregularity of the film thickness of a cantilever which is one of the most important element for determining the sensitivity of an acceleration sensor is remarkably reduced, and the yield of an acceleration sensor having aimed sensitivity is improved. The 100% inspection process of the sensitivity of acceleration sensors which has been necessary in the conventional case is made unnecessary, so that an acceleration sensor of low cost can be provided. |
