发明名称 METHOD OF MANUFACTURING SINGLE CRYSTAL AND APPARATUS FOR MANUFACTURING SINGLE CRYSTAL
摘要 A molten raw material is supercooled and is floated at a very weak gravity to lower the free energy of a part of the surface of the molten material, thus growing a single crystal. A single crystal manufacturing apparatus (31) has a gold image furnace (35), a chamber (33), a raw material supplying and retaining mechanism (38), fall tubes (36, 37), a rotary plate (39) and a recovery bath (40). A semiconductor raw material (32a) is melted and then fallen freely in a vacuum in the fall tubes (36, 37). In the course of the fall of the melt, a part of the surface of each spherical supercooled melt droplet (32b) is brought into contact with the solid surface of the rotary plate (39) to form a crystal nucleus, from which a single-crystal grows into a spherical single crystal (32c), which then enters the recovery bath (40).
申请公布号 WO9922048(A1) 申请公布日期 1999.05.06
申请号 WO1997JP03844 申请日期 1997.10.23
申请人 NAKATA, JOSUKE 发明人 NAKATA, JOSUKE
分类号 C30B11/00;C30B30/08 主分类号 C30B11/00
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