| 摘要 |
PROBLEM TO BE SOLVED: To evaluate a pattern shift accurately and simply without cleaving a sample. SOLUTION: This is an evaluation method of a pattern shift of an epitaxial layer 3, which is laminated on a substrate 1 having prescribed patterns 1a and is transferred on the surface of the substrate 1 by shifting the prescribe patterns 1a, which are base layers, in the plane direction. First heavily doped regions 2 are previously formed in the substrate 1 and after second reverse conductivity type heavily doped regions 4 are formed in the layer 3 to patterns 3a subsequent to a shift of the surface of the layer 3, the characteristics of diodes, which are formed between regions of the same conductivity type as that of the regions 2 or 4, are measured to estimate quantitatively are pattern shift. When the relative positions of both heavily doped regions 2 and 4 are shifted from each other on the planes (x) and (y) by prescribed amountsαand a plurality of diodes D (-2) to D (2) are formed, the direction of the shift can be also evaluated. Moreover, when the obtained amounts S of the shift is corrected by the amount of a measured alignment deviation, the accuracy of the pattern shift is enhanced.
|
