发明名称 COMPOSITION FOR REMOVING RESIDUE OF POLYMER
摘要 PROBLEM TO BE SOLVED: To provide a composition for removing the residue of a plasma etched polymer form a substrate such as an electronic device. SOLUTION: The composition contains one or more first polymer dissolution promoting bases selected from tetra(1-6C)alkylammonium hydroxides, tetra(1-6C) alkylammonium carbonates, tetra(1-6C)alkylammonium acetates, tetra(1-6C) alkylammonium citrates and tetra(1-6C)alkylammonium silicates, one or more second polymer dissolution promoting bases selected from hydroxylamines, hydroxylamine formates and hydroxylamines each buffered with a carboxylic acid and one or more polar aprotic solvents.
申请公布号 JP2001312074(A) 申请公布日期 2001.11.09
申请号 JP20010048934 申请日期 2001.02.23
申请人 SHIPLEY CO LLC 发明人 SAHBARI JAVAD J
分类号 G03F7/40;C11D3/00;C11D3/02;C11D3/43;C11D7/26;C11D7/32;C11D7/34;C11D7/50;C11D11/00;C11D17/08;G03F7/42;H01L21/02;(IPC1-7):G03F7/40 主分类号 G03F7/40
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