| 摘要 |
PURPOSE:To remove a common diffused layer of driving MOS transistor for reducing the pattern space by a method wherein a control electrode of the first driving MOS transistor and another control electrode of the second driving MOS transistor are overlapped each other in the current flow direction. CONSTITUTION:A semiconductor device with a multiple layer gate electrode structure comprising a NAND circuit is provided with a load MOS transistor TrQ11, the first and the second driving MOS TrQ12, TrQ13. At this time, a control electrode 14 of TrQ12 and another control electrode 15 of TrQ13 are overlapped each other in the current flow direction. Thus, a conventional diffused layer is not formed between TrQ12 and TrQ13. Through these procedures, the pattern space can be reduced. |
