| 摘要 |
PURPOSE:To almost perfectly eliminate damages in semiconductor substrate by the heat processing under inactive gas atmosphere and the heat processing under the gas containing oxygen, after the end of dry etching. CONSTITUTION:A silicon oxide film 2 is formed on a silicon single crystal subsrate 1 and a pattern of resist 3 is formed by the photo etching technique. The etching is performed with the resist 3 used as the mask and the oxide film 2 is perfectly eliminated until the substrate 1 is exposed. Thereafter, the resist is separated. At this time, a damage layer 4 including impurity or crystal defect mainly consisting of carbon and fluorine is formed at the surface of substrate 1. Next, silicon wafer is heated under inactive gas atmosphere. An oxide film 5 is formed under the ambient containing at least the oxygen gas. An oxide film 5 is removed with a solution including fluorine. |
