| 摘要 |
PURPOSE:To form a minute pattern in a high speed without a photo resist by heating overall a thin film consisting of inorganic material formed on a substrate to crystallize it and irradiating an optical beam to it thereafter to change the phase of the crystal in the light-irradiated part and etching it to form a rugged pattern. CONSTITUTION:A well polished and washed glass substrate 1 is set in a vacuum device 6, and alloy material 8 of Te-Ge-Sn put in a port 7 of tungsten is vacuum-deposited on this substrate 1 while rotating a motor M, thus forming a thin film 9. This substrate 1 is put in a thermostatic chamber to change the phase of the thin film 9 to the minute crystal state. Next, this substrate 1 is put on a turntable rotating in a high speed, and the optical beam, which is converged on the surface of this thin film 9', from an Ar ion laser light source is modulated and irradiated to form a part 9' in the minute crystal state and a part 10 made amorphous by light irradiation on the thin film. This thin film is plasma-etched. Since the etching speed in the part made amorphous by light irradiation is 3-10 times as high as that in the unirradiated part, a recessed part is generated in accordance with a light-irradiated pattern, and a rugged part what is called positive pattern is generated. |
