发明名称 RESIST PATTERN FORMING METHOD
摘要 PURPOSE:To form easily a minute resist pattern by providing >=1 through holes on a photomask where there is no trouble with respect to its pattern. CONSTITUTION:A photosensitive resin layer 2 is laminated on a substrate 1 made of copper-plated stainless steel, etc., and then a photomask 3, which has holes 5 at four locations on the diagonal lines in an art work pattern, is adhered securely to be exposed after vacuum suction. Subsequent to the removal of the photomask 3, a resist pattern is obtained by development. Since bubbles are removed by virtue of the holes provided, a minute resist pattern is formed easily.
申请公布号 JPS6141151(A) 申请公布日期 1986.02.27
申请号 JP19840163306 申请日期 1984.08.02
申请人 HITACHI CHEM CO LTD 发明人 KAWASHIMA YUTAKA
分类号 H05K3/00;G03F9/00 主分类号 H05K3/00
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