| 摘要 |
A dry-developing positive resist composition consisting of (a) a polymeric material containing, in the molecular structure, unsaturated hydrocarbon bonds inclusive of vinyl, allyl, cinnamoyl, or acryl double bonds or epoxy groups or halogen atoms and (b) 1% to 70% by weight, based on the weight of the composition, of a silicon compound. A positive resist pattern is formed on a substrate by a process comprising coating the substrate with said resist composition, exposing the resist layer to radiation, and developing a resist pattern on the substrate by treatment with gas plasma. |
