| 发明名称 |
SRAM with local interconnect |
| 摘要 |
An SRAM using TiN local interconnects. This permits the moat parasitic capacitance to be reduced, and also avoids use of metal jumpers, resulting in increased density.
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| 申请公布号 |
US4975756(A) |
申请公布日期 |
1990.12.04 |
| 申请号 |
US19890317149 |
申请日期 |
1989.02.28 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HAKEN, ROGER A.;TANG, THOMAS E.;WEI, CHE-CHIA;HITE, LARRY R. |
| 分类号 |
H01L21/311;H01L21/321;H01L21/768;H01L21/8238;H01L21/8247;H01L27/105;H01L27/11 |
主分类号 |
H01L21/311 |
| 代理机构 |
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代理人 |
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