| 摘要 |
PURPOSE:To generate electron-electrode pairs in a drift electric field by forming a P-N junction perpendicularly in a structure that an N-type conductivity diffused layer and a P-type conductivity diffused layer are diffused in parallel perpendicularly to a photodetecting surface to reduce the recombination of the generated electron-hole pairs and the collection thereof due to traps. CONSTITUTION:An energy level is inclined in an i-type layer 4, and a drift electric field formed of an N-type layer 2 and a P-type layer 3 is distributed substantially in a uniform slope in the i-type layer. Photons of a light 8 collide with the crystal lattice of the layer 4 to excite electrons to diffuse them in the crystal, but since the i-type layer contains less impurity content, the crystal lattice is less damaged, the density at the center of the recombination is low and a trap is small. Thus, the recombination and the probability of collecting them by the trap are remarkably small. Since the generated electron-hole pairs are disposed in the drift electric field having a potential slope, they are diffused and then accelerated by the drift electric field to disturb the recombination thereof to be collected in the layers 2, 3 for effective use in the output of a solar cell. |
