THIN FILM TRANSISTOR & METHOD FOR MANUFACTURING THE SAME

摘要

The method is for providing a crystal thin film transistor of a plane structure and for simplifying the process. The liquid crystal thin film transistor comprises: a gate electrode(2) formed on a glass substrate(1); the first anode oxidized film(3a) which is formed around the gate electrode(2), being contacted with the gate electrode(2); and the second anode oxidized film(3b) formed on the first anode oxidized film(3a) and on the gate electrode(2), with a plane surface.