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发明名称
SEMICONDUCTOR MEMORY USING WORD LINE DRIVING VOLTAGE
摘要
申请公布号
KR0164816(B1)
申请公布日期
1999.02.01
申请号
KR19950012273
申请日期
1995.05.17
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KYUNG, KYE-HYUN;CHO, SOO-INN
分类号
G11C11/413;G11C5/14;G11C11/407;(IPC1-7):G11C5/14
主分类号
G11C11/413
代理机构
代理人
主权项
地址
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