| 摘要 |
A method for forming a semiconductor device is provided to form a gate by removing all of gate polysilicon patterns from an upper part of an isolation layer. An isolation layer(130) is formed on a semiconductor substrate(100) to define an active region(120). A gate oxide layer and a gate polysilicon layer are formed on the entire surface of the semiconductor substrate. A gate oxide layer(145) and a gate polysilicon pattern are formed by performing an etch process using a gate mask. The gate oxide layer and the gate polysilicon pattern are removed from the remaining region except for an upper part of the active region by performing an etch process using a mask for forming the isolation layer. A gate metal layer and a gate hard mask layer are formed on the entire surface of the semiconductor substrate including the gate polysilicon pattern. An upper part of the gate hard mask is planarized. A gate(180) is formed by etching the gate hard mask and the gate metal layer.
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