发明名称 |
SEMICONDUCTOR DEVICES HAVING SILICON-ON-INSULATOR (SOI) SUBSTRATES AND METHODS OF MANUFACTURING THE SAME |
摘要 |
Semiconductor devices are provided including gate patterns on a substrate and isolation regions on the substrate. Insulating patterns are provided in the substrate below the gate patterns. Source/drain regions are provided in the substrate. Related methods of fabricating semiconductor devices are also provided.
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申请公布号 |
US2008217689(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20080040024 |
申请日期 |
2008.02.29 |
申请人 |
SON YONG-HOON;CHOI HYE-RAN;LEE JONG-WOOK |
发明人 |
SON YONG-HOON;CHOI HYE-RAN;LEE JONG-WOOK |
分类号 |
H01L27/04;H01L21/336 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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