| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist pattern forming method by heat lithography, by which a resist pattern of excellent profile can be formed. <P>SOLUTION: The resist pattern forming method by heat lithography includes: a step of forming a resist film on a support using a resist composition; a step of selectively exposing "the resist film" or "a resist underlayer film on the support located near the resist film", both absorbing light of a wavelength of an exposing source used in the heat lithography, under the following conditions (1), (2) and (3); and a step of developing the resist film to form a resist pattern. (1) The exposure method: a DC line system, (2) laser drawing linear velocity: 0.5-6.0 m/s, and (3) laser power: 0.1-40 mW. <P>COPYRIGHT: (C)2009,JPO&INPIT |
