发明名称 |
Phase change memory device and associated wordline driving circuit |
摘要 |
A semiconductor memory device includes a plurality of wordline driving circuits adapted to control the voltage level of a sub-wordline in response to a logic state of a global wordline and an address signal. The wordline driving circuit comprises first and second transistors configured to maintain the sub-wordline at a first voltage level when the global wordline and the address signal have a first logic state and at a second voltage level when the global wordline or the address signal have a second logic state.
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申请公布号 |
US7548446(B2) |
申请公布日期 |
2009.06.16 |
申请号 |
US20050319604 |
申请日期 |
2005.12.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYE-JIN;KIM DU-EUNG;CHO BEAK-HYUNG;OH HYUNG-ROK |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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