SEMICONDUCTOR SWITCH CIRCUIT

摘要

A semiconductor switch circuit includes a plurality of switching units connected in series between a high-voltage node and a low-voltage node, and a plurality of diodes provided in association with the plurality of switching units, respectively. Respective cathodes of the plurality of diodes are connected to the plurality of switching units, respectively, and the anode of the diode associated with the switching unit connected to the low-voltage node receives a predetermined power supply voltage. Each switching unit includes a semiconductor switching device, a gate drive circuit driving the semiconductor switching device, and a DC-DC converter receiving a DC voltage from a cathode of the associated diode and supplying drive power to the gate drive circuit.

主权项

1. A semiconductor switch circuit comprising:
first to N-th (N is an integer of 2 or more) switching units connected in series between a high-voltage node and a low-voltage node; first to N-th rectifying devices provided in association with said first to N-th switching units, respectively; and a DC power supply outputting a predetermined DC voltage, N being an integer of 2 or more, respective cathodes of said first to N-th rectifying devices being connected to said first to N-th switching units, respectively, respective anodes of said first to (N−1)-th rectifying devices being connected to respective cathodes of said second to N-th rectifying devices, respectively, and an anode of said N-th rectifying device being connected to a positive electrode of said DC power supply and receiving said predetermined DC voltage, and a negative electrode of said DC power supply being connected to said low-voltage node, a voltage value of said high-voltage node being higher than a voltage value of said low-voltage node, said first to N-th switching units each including:
a semiconductor switching device;a gate drive circuit to drive said semiconductor switching device; anda DC-DC converter to receive a DC voltage from the cathode of an associated rectifying device and supply drive power to said gate drive circuit, and said N semiconductor switching devices included respectively in said first to N-th switching units being connected in series between said high-voltage node and said low-voltage node.