| 摘要 |
PROBLEM TO BE SOLVED: To provide, for power supply voltage applied for an adaptive supply voltage technique (ASV), a signal level adjustment method that can achieve appropriate driving for an SRAM cell in a semiconductor device having therein plural types of transistors including transistors of the SRAM cell.SOLUTION: The signal level adjustment method includes: measuring characteristics of each transistor in a semiconductor device including memory cell transistors with an ASV monitor circuit; determining a power supply voltage supplied to the semiconductor device based on the measured characteristics of the transistor; measuring data reading speed of a memory cell receiving the determined power supply voltage by an SRAM word line monitor circuit while changing the signal level of the word line; and comparing the measured data reading speed of the memory cell to a specification range of the memory cell, and determining the signal level of the word line. Accordingly, the signal level of the word line can be appropriately set at a power supply voltage applied by the ASV.SELECTED DRAWING: Figure 5 |
