发明名称 LVTSCR ESD protection clamp with dynamically controlled blocking junction
摘要 In an SCR-based ESD protection clamp, the voltage overshoot during an ESD event is reduced by separately controlling the voltage pulse to the drain and emitter contacts of the SCR. The voltage pulse to the drain is preferably delayed using a delay circuit such as an RC circuit. This allows double conductivity modulation to be achieved with lower voltage overshoot.
申请公布号 US6970335(B1) 申请公布日期 2005.11.29
申请号 US20030626105 申请日期 2003.07.23
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 VASHCHENKO VLADISLAV;CONCANNON ANN;HOPPER PETER J;TER BEEK MARCEL
分类号 H01L27/02;H02H9/00;(IPC1-7):H02H9/00 主分类号 H01L27/02
代理机构 代理人
主权项
地址