| 摘要 |
A thermal treatment apparatus cleaning method includes a heating step to heat a reaction chamber up to 300 °C and a cleaning step to remove silicon nitride from an inner portion of the thermal treatment apparatus. In the cleaning step, a reaction tube heated up to 300°C is filled with a cleaning gas containing fluorine gas, chlorine gas, and nitrogen gas and silicon nitride is removed, thereby cleaning the inner portion of the thermal treatment apparatus.
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