发明名称 |
Verfahren zum Bilden selbst-passivierender Interconnects und resultierender Vorrichtungen |
摘要 |
A method of forming self-passivating interconnects. At least one of two mating bond structures is formed, at least in part, from an alloy of a first metal and a second metal (or other element). The second metal is capable of migrating through the first metal to free surfaces of the mating bond structures. During bonding, the two mating bond structures are bonded together to form an interconnect, and the second metal segregates to free surfaces of this interconnect to form a passivation layer. Other embodiments are described and claimed. |
申请公布号 |
DE112006000647(T5) |
申请公布日期 |
2008.03.20 |
申请号 |
DE20061100647T |
申请日期 |
2006.03.16 |
申请人 |
INTEL CORPORATION |
发明人 |
KOBRINSKY, MAURO;HE, JUN;O'BRIEN, KEVIN;ZHOU, YING;RAMANATHAN, SHRIRAM |
分类号 |
H01L21/98;B23K35/30 |
主分类号 |
H01L21/98 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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