| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for sputtering and depositing a carrier/barrier layer substantially without contaminating or disturbing the surrounding surface and subjecting the carrier/barrier layer to sculptured coating to achieve a desired shape. <P>SOLUTION: In the method, a sculptured material layer is applied onto a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by collision of ions of a deposited layer. The method comprises a step of applying a first portion of a sculptured layer with a substrate bias sufficiently low for preventing erosion or contamination of the surface onto which the sculptured layer is applied and a step of applying a subsequent portion of the sculptured layer with a substrate bias sufficiently high for sculpturing a shape from the first portion while depositing an additional layer material. The method is particularly applicable to the sculpturing of a barrier layer, a wetting layer, a conductive layer, etc. on a semiconductor feature surface and is especially helpful when the conductive layer is copper. <P>COPYRIGHT: (C)2009,JPO&INPIT |
