发明名称 |
Method for etching organic film |
摘要 |
A method for etching an organic film 1 having a surface selectively protected by a hard mask layer 2, includes a partial etching process of etching the organic film 1 partly in a thickness direction of the organic film 1 by using a mixed gas containing a gas that anisotropically etches a silicon oxide film and a gas that isotropically etches the organic film without etching the silicon oxide film; and a deposition process of depositing a protective film 3 made of the silicon oxide film on side surfaces 12 and a bottom surface 11 of a recess 10 formed in the organic film in the partial etching process. The partial etching process and the deposition process is alternately performed multiple times. |
申请公布号 |
US9376748(B2) |
申请公布日期 |
2016.06.28 |
申请号 |
US201514625048 |
申请日期 |
2015.02.18 |
申请人 |
AICHI STEEL CORPORATION |
发明人 |
Yamamoto Michiharu;Tatematsu Shunichi;Yamashita Ryusuke;Hamada Norihiko;Gemba Koei |
分类号 |
B44C1/22;C23C16/04;C23C16/44;C23C16/40;H01F41/04 |
主分类号 |
B44C1/22 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method for etching an organic film having a surface selectively protected by a hard mask layer, the method comprising:
a) partially etching the organic film in a thickness direction thereof with a mixed gas comprising a gas that anisotropically etches a silicon oxide film and a gas that isotropically etches the organic film without etching the silicon oxide film to form a partially etched organic film; and b) depositing a protective film made of the silicon oxide film on side surfaces and a bottom surface of a recess formed in a) in the partially etched organic film, wherein a) and b) are each performed multiple times. |
地址 |
Tokai-shi JP |