| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability in a semiconductor device which employs TSV technology.SOLUTION: A semiconductor device manufacturing method comprises polishing an insulation film IF2, a liner film IF1 and a barrier metal film BM which covers bottoms of a plurality of through electrodes TE protruding from a rear face of a semiconductor substrate SW in a chemical mechanical polishing (CMP) method to expose bottom faces of the plurality of through electrodes TE from the rear face side of the semiconductor substrate SW. At this time, a slurry which has a polishing rate of the barrier metal film BM more than five times higher than a polishing rate of the insulation film IF2 and a polishing rate of the plurality of through electrodes TE more than twice higher than a polishing rate of the insulation film IF2 is used. |
