| 摘要 |
<p>PURPOSE:To provide possibility of making any desired profile of impurities by scanning the acceleration voltage on the way of ion implantation. CONSTITUTION:Impurity ions (for ex., B<+>, P<+>) produced in an ion source 1 are accelerated by a high electric field at an acceleration part 2 and mass analyzed in an ion beam separator 3 so as to select only necessary ions, which are implanted into a wafer 6 set in an ion implantation chamber 5 by a scanning system 4. Therein the acceleration voltage V2 to be impressed on the acceleration part 2 shall be capable of continuous variation (scanning) and undergo scan control by the use of a computer etc., in accordance with a preset program. This allows accomplishment of impurities profile in a concentration distribution corresponding to the depth as any desired.</p> |
