| 摘要 |
<p>PURPOSE:To enable the flatness of the title semiconductor epitaxial wafer even if large-sized to be secured at ordinary temperature by a method wherein a silicon substrate is fixed on a susceptor sheet to manufacture the semiconductor epitaxial wafer. CONSTITUTION:A silicon substrate 4 is fixed on a susceptor sheet 1 changing spherical configulation by temperature change in the same behavior as that of semiconductor epitaxial wafer so as to manufacture the semiconductor epitaxial wafer. Through these procedures, the title semiconductor epitaxial wafer provided on silicon substrate 4 comprising a gallium arsenide layer, gallium arsenide mixed crystal layer having no warp at all can be manufactured. Furthermore, the whole surface of the wafers in the temperature raising time are in contact with the surface of the susceptor sheet 1 to constantly sustain the even temperature distribution in the wafer surface, resultantly, the title semiconductor epitaxial wafer having even crystallizability and electrical characteristics in excellent quality can be manufactured.</p> |
