Non-volatile memory cells and production processes are formed on projection of semiconductor wafer with transistor connection regions and charging layers connected to a gate electrode

摘要

Non-volatile memory cells comprises cells (5) formed on a projection (10) of a semiconductor wafer. A transistor is formed having regions (30,32) with two connections (30,32) each comprising connecting regions (26,26') and charging layers (20,20') on an upper surface (12). A third region (34) has a gate electrode and a non-conductive gate layer (36) at least partly on the projection sidewalls with the gate electrode contacting both charging layers. An independent claim is also included for production processes for the above.