INSULATING FILM FORMING METHOD AND SEMICONDUCTOR ELEMENT

摘要

Provided is an insulating film forming method wherein an insulating film is formed by performing heat treatment to a silicon wafer in an atmosphere gas. In the method, oxygen diluted with nitrogen is used as the atmosphere gas. The heat treatment is performed to the silicon wafer under the atmosphere gas by using a resistance heating furnace at a temperature of 700-900°C, and a silicon oxide film having a thickness of 10nm or less is formed as the insulating film. Thus, a resistance heating furnace used for forming normal insulating films can be used as it is, and the highly reliable insulating film is formed on the silicon wafer without using a special gas or the like. A semiconductor element provided with the insulating film formed by such method is also provided.