Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors

摘要

The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate.;

主权项

1. A process for the deposition of a ruthenium containing film on a substrate, comprising the steps of:
a) introducing at least one ruthenium containing precursor into a reactor containing one or more substrates, wherein the at least one ruthenium containing precursor has the formula: whereinR1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are independently selected from H; a C1-C4 linear, branched, or cyclic alkyl group; a C1-C4 linear, branched, or cyclic alkylsilyl group; a C1-C4 alkylamino group; or a C1-C4 linear, branched, or cyclic fluoroalkyl group; and b) Depositing at least part of the ruthenium containing precursor onto the at least one substrate to form a ruthenium containing film.