| 摘要 |
1302206 Electrostatic recording element AUSTRALIA DEPARTMENT OF SUPPLY SECRETARY OF 22 Dec 1969 [30 Dec 1968] 62458/69 Heading H1K An element for use in electrostatic recording has at least two selected layers of dissimilar material one layer being partially diffused into the other layer to produce zones of p-type and n-type semi-conductors which act together as rectifying junctions, the junctions being within 1 micron of the exposed surface of the element. In the specific embodiments a glass substrate is vacuum coated sequentially with bismuth, bismuth telluride and selenium; Tl 2 Se 3 +Se; Bi 2 Se 3 +As 2 S 3 ; Au+Se or MoO 3 +MgF 2 . As the materials condense on the surface being coated, the latent heat released produces partial diffusion of one layer into the other. Other materials for the first layer may be As, Au, Cu, Cd, Bi, Si, carbides, nitrides or borides of U, W, or Ta, oxides, sulphides, selenides, tellurides or iodides of Tl, Hg, Bi, Cd, Pb, Hg, or Cu, arsenides or antimonides of Cu, Ga or In. The other layer may be C, Se, sulphides, selenides, or sulpho-selenides of Sb, As or Cd, oxides of Al, Ni, Ti, Sn, Si, or Zn. The support may be metal, plastics or an inorganic polymer which may be conductively coated. The materials of the support and the first layer may be chosen such that a rectifying contact is formed. The element is sensitive to I.R., X or gamma rays and helium ions as well as visible radiation. In the case of a gold layer overlaid by a selenium layer it is said that a metal -n-i-p-n structure is formed by the diffusion of one substance into the other. |
