| 摘要 |
PURPOSE:To stabilize the output voltage of an IC by a method wherein a voltage dividing circuit is connected between an electric power source line and an earthing conductor, and a capacitor consisting of a depletion type MOSFET or a capacitor consisting of poly-crystalline silicon and an interlayer oxide film is provided between the output point of the voltage dividing circuit thereof and the fixed electric potential point. CONSTITUTION:A voltage dividing circuit 1 and a gate earthed amplifying circuit 3 are connected through the output point 2 of a circuit 1 to constitute an MOS type IC, and moreover a capacitor 4 is connected between an output point 2 and the fixed electric potential point in addition. In this constitution, when an input IN of the circuit 3 varies, although an output having large amplitude is generated at an output terminal OUT to apply large influence to the voltage at the output point 2 through capacitance between a gate and source, drain and between channels of an MOSFET element Q2 for amplification constituting the circuit 3, width of voltage variation is reduced because of existance of the capacitor 4 added newly. At this case, the capacitor 4 is consituted of an MOSFET, polycrystalline silicon, etc. |
