发明名称 |
Process for forming wiring on substrate |
摘要 |
In a process for forming a wiring conductor of Cu, Al, Au or the like on a wiring substrate, polyimide-based resin having the following unit structural formula is used as a lift-off material. <IMAGE> wherein R1: <IMAGE> R2: <IMAGE> n is an integer of 15,000 to 30,000. This lift-off material has very good etching susceptibility and can be selectively lifted off with an etching solution of a mixture of hydrazine and ethylene diamine from a lower polyimide layer having R1: <IMAGE> R2: <IMAGE> .
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申请公布号 |
US4886573(A) |
申请公布日期 |
1989.12.12 |
申请号 |
US19870087021 |
申请日期 |
1987.08.19 |
申请人 |
HITACHI, LTD. |
发明人 |
WATANABE, HIROSHI;MIURA, OSAMU;MIYAZAKI, KUNIO;NUMATA, SHUNICHI;OTSUKA, KANJI |
分类号 |
H01L21/3205;H01L21/027;H01L21/306;H01L21/312;H05K3/02;H05K3/04;H05K3/06;H05K3/46 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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