发明名称 Process for forming wiring on substrate
摘要 In a process for forming a wiring conductor of Cu, Al, Au or the like on a wiring substrate, polyimide-based resin having the following unit structural formula is used as a lift-off material. <IMAGE> wherein R1: <IMAGE> R2: <IMAGE> n is an integer of 15,000 to 30,000. This lift-off material has very good etching susceptibility and can be selectively lifted off with an etching solution of a mixture of hydrazine and ethylene diamine from a lower polyimide layer having R1: <IMAGE> R2: <IMAGE> .
申请公布号 US4886573(A) 申请公布日期 1989.12.12
申请号 US19870087021 申请日期 1987.08.19
申请人 HITACHI, LTD. 发明人 WATANABE, HIROSHI;MIURA, OSAMU;MIYAZAKI, KUNIO;NUMATA, SHUNICHI;OTSUKA, KANJI
分类号 H01L21/3205;H01L21/027;H01L21/306;H01L21/312;H05K3/02;H05K3/04;H05K3/06;H05K3/46 主分类号 H01L21/3205
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