| 发明名称 |
Resistor structure and method of fabrication |
| 摘要 |
A resistor in an integrated circuit having a conductive shield layer between the resistor and an insulative layer. The contacts of the resistor may also contact the conductive shield layer. The shield layer may be formed during a single or double level polysilicon bipolar transistor fabrication process.
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| 申请公布号 |
US5200733(A) |
申请公布日期 |
1993.04.06 |
| 申请号 |
US19910769209 |
申请日期 |
1991.10.01 |
| 申请人 |
HARRIS SEMICONDUCTOR CORPORATION |
发明人 |
DAVIS, CHRISTOPHER K.;CARNDELL, THOMAS L. |
| 分类号 |
H01L23/58;H01L23/60;H01L27/08;H01L29/8605 |
主分类号 |
H01L23/58 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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