| 摘要 |
PURPOSE:To form the semiconductor device which can prevent the transistor gate oxide film of an input/output stage circuit from being destroyed and can satisfy both high speed and high reliability. CONSTITUTION:At the semiconductor device provided with output stage transistors Q11 and Q12 which drain terminals D are connected to an output terminal TOUT, this device is provided with transistors Q1 and Q2 for protection for which the drain terminals D and gate terminals G are connected to the output terminal TOUT in common, second terminals S is connected to the gate terminals G of the output stage transistors Q11 and Q12 and a threshold voltage Vth higher than an operation power supply voltage Vcc of this semiconductor device is provided. On the other hand, concerning the semiconductor device provided with an input stage transistor for which the drain terminal and a source terminal are provided and a gate terminal is connected to an input terminal, this device is provided with a transistor for protection for which the gate terminal and the drain terminal are connected to the input terminal in common and the source terminal is connected to the drain terminal of the input stage transistor. |
