| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of forming a high withstand voltage IC by carrying out element isolation via a p-n junction and suppressing the lowering of the withstand voltage due to electric field concentration. SOLUTION: An electrically conductive layer 12 is formed so that it crosses a drain electrode wiring 10a under the drain electrode wiring 10a connected to a drain electrode 10 of a lateral field effect transistor for which element isolation is performed via a p-n junction, the drain electrode wiring 10a being pulled out on the other device region. The electrically conductive layer 12 has a stepped cross-sectional form, and a lower step layer 12a is formed directly on a p<+> type element isolation region 3 and an upper step layer 12b is formed between the drain electrode wiring 10a and an n type semiconductor epitaxial layer 2 via an insulating film 11, and the electrically conductive layer 12 is electrically connected with a p type semiconductor substrate 1 via the p<+> type element isolation region 3. |
