| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride semiconductor device having an excellent electrostatic withstand voltage property and improved reliability. <P>SOLUTION: The manufacturing method of the group III nitride semiconductor device has an n-type layer, an active layer, and a p-type layer comprising a group III nitride semiconductor in this order on a substrate. During and/or after growth of the n-type layer and before growth of the active layer, the growth rate of the semiconductor is reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT |
