| 摘要 |
FIELD: computer vision technology, production of multicomponent photodetectors including video and photographic cameras. ^ SUBSTANCE: proposed method includes preparation of semiconductor substrate of first polarity of conductivity; formation of one or more epitaxial layers of first [polarity of conductivity with regions of first polarity of conductivity preformed at boundary of layers of deepened regions of first polarity of conductivity and deepened regions of second polarity of conductivity reverse to that of substrate above them; formation of regions of vertical inserts contacting deepened regions of same polarity of conductivity in each epitaxial layer on one end and surface insulator or surface regions of same polarity of conductivity as inserts on other end; formation of surface regions of first and second polarities of conductivity; formation of n-MOS and p-MOS transistors. For manufacturing MOS transistors additionally insulated from substrate, transistors with control p-n junctions, and bipolar transistors insulating shells are formed prior to forming transistors of mentioned types, each shell incorporating deepened region and insert of same polarity of conductivity around transistor; all regions constituting insulating shells and transistors proper are produced in same process operations as those used for photodetector regions. ^ EFFECT: improved reliability of transistor-to-substrate insulation in photodetector-servicing electronic circuit, reduced noise in photodetector signal amplifiers, enhanced speed of signal read-out and processing circuits. ^ 1 cl, 5 dwg |
