发明名称 |
Direct contact to area efficient body tie process flow |
摘要 |
<p>A process flow for fabricating shallow trench isolation (STI) devices with direct body tie contacts is provided. The process flow follows steps similar to standard STI fabrication methods except that in one of the etching steps, body tie contacts are etched through the nitride layer and STI oxide layer, directly to the body tie. This process flow provides a direct body tie contact to mitigate floating body effects but also eliminates hysteresis and transient upset effects common in non-direct body tie contact configurations, without the critical alignment requirements and critical dimension control of the layout.</p> |
申请公布号 |
EP2148362(A1) |
申请公布日期 |
2010.01.27 |
申请号 |
EP20090160633 |
申请日期 |
2009.05.19 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
FECHNER, PAUL;LARSEN, BRADLEY;DOUGAL, GREGOR;GOLKE, KEITH |
分类号 |
H01L21/336;H01L21/84;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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