| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory apparatus which can reduce a parasitic current as much as possible without an electric separating means. SOLUTION: In the nonvolatile semiconductor memory apparatus including a plurality of memory cell transistors M1, etc., with a series connection of sources and drains, column lines SBL0, etc., for connecting memory cell rows and the transistor M1, etc., a source line PV1 and a sense amplifier for detecting a potential level of the column line or the like, the sense amplifier is constituted of a first, a second sense amplifiers A0, A1 and includes column lines SBL3, SBL5 for connecting terminals of a memory cell M6, etc., a sense column line selection means SS2 for connecting the first, second sense amplifiers, etc., and a source-supplying column line selection means DS0 for connecting the column line connected to the other terminal of the memory cell and the source line, etc. |
