| 摘要 |
PROBLEM TO BE SOLVED: To lessen an off-state current in an insulated gate field-effect semiconductor device and to allow executing the on-off control action of the device at a high-speed response. SOLUTION: A plurality of insular non-single crystal semiconductor layers 2, which respectively have at least a channel formation region, a source region and a drain region, are formed on an insulating substrate and these layers 2 are doped a crystallization of regions 7 and 8 doped with these impurities is furthered to form source and drain regions. The above source and drain regions are formed containing the impurities in the whole areas of the layers 2 excluding the above channel formation regions. Moreover, a gate insulating film 3 contains a silicon nitride. |
