发明名称 |
FABRICATION OF STRUCTURES OF METAL/SEMICONDUCTOR CFABRICATION OF STRUCTURES OF METAL/SEMICONDUCTOR COMPOUND BYX-RAY/EUV PROJECTION LITHOGRAPHY OMPOUND BYX-RAY/EUV PROJECTION LITHOGRAPHY |
摘要 |
A lithography method for fabricating structures of etch-resistant metal- semiconductor compound on a substrate with sub-micrometer scale resolutions is describes. Superposed layers of metal and semiconductor capable of reacting with each other to form etch-resistant metal/semiconductor compound are deposited on the substrate. Radiation from a X-ray/EUR source propagates through a patterned X-ray transparent/EUR reflective mask and is projected o n the superposed metal and semiconductor layers. The X-ray transparent mask includes X-ray absorbing patterns imparted to the X-ray radiation while the EUV reflective mask includes EUV absorbing patterns also imparted to the EUV radiation. The energy of X-ray/EUV photons is absorbed locally by the metal and semiconductor layers. Absorption of this energy induces a reaction betwe en the two layers responsible for the formation of etch-resistant metal/semiconductor compound with structures corresponding to the patterns imparted to the radiation by the X-ray/EUV mask. The metal layer is subsequently etches using selective plasma or wet etching, leaving the structures of etch-resistant metal/semiconductor compound intact.
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申请公布号 |
CA2433076(A1) |
申请公布日期 |
2002.08.15 |
申请号 |
CA20012433076 |
申请日期 |
2001.02.05 |
申请人 |
QUANTISCRIPT INC. |
发明人 |
DROUIN, DOMINIQUE;LAVALLEE, ERIC;BEAUVAIS, JACQUES |
分类号 |
B81C1/00;G03F1/22;G03F1/24;G03F1/50;G03F7/004;H01L21/027;H01L21/3065;H01L21/308;(IPC1-7):G03F1/08;G03F7/00;G03F1/14 |
主分类号 |
B81C1/00 |
代理机构 |
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