NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE FOR FLIP CHIP

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting diode with high reliability having a lower forward direction voltage and high emission efficiency with a current crowding phenomenon relased.

SOLUTION: The nitride semiconductor light emitting diode comprises: a translucent substrate for growing up a nitride single crystal; an n-type nitride semiconductor layer formed on the translucent substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a high reflex ohmic contact layer which is formed on the p-type nitride semiconductor layer and composed of a mesh structure having a plurality of open regions where the p-type nitride semiconductor layer is exposed; a metal barrier layer formed in at least partial region on the top face of the high reflex ohmic contact layer; and a p-side bonding electrode and an n-side electrode which are formed on the metal barrier layer and the n-type nitride semiconductor layer, respectively.

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