| 发明名称 |
SEMICONDUCTOR ELEMENT HAVING MULTIPLE DIFFUSION PREVENTION FILM |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor element having a diffusion prevention film capable of effectively suppressing the external diffusion of impurities even if the sheet resistance and contact resistance of a gate stack are small. <P>SOLUTION: The semiconductor element comprises: a first conductive layer 211; a first diffusion prevention film where a metal silicide film 212A and a metal film 212B containing nitrogen are laminated successively while the first diffusion prevention film is formed on the first conductive layer 211; a second diffusion prevention film containing a metal silicide film 212D containing at least nitrogen on the first diffusion prevention film; and a second conductive layer 213 on the second diffusion prevention film. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
| 申请公布号 |
JP2008166770(A) |
申请公布日期 |
2008.07.17 |
| 申请号 |
JP20070327082 |
申请日期 |
2007.12.19 |
| 申请人 |
HYNIX SEMICONDUCTOR INC |
发明人 |
LIM KWAN-YONG;YANA KOUZEN;CHO KOZAI;KIM TAE KYUNG;KIM YONG-SOO;SUNG MIN-GYU |
| 分类号 |
H01L29/423;H01L21/28;H01L21/285;H01L21/8247;H01L27/115;H01L29/49;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L29/423 |
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