Methods and apparatuses to form self-aligned caps

摘要

At least one conductive line in a dielectric layer over a substrate is recessed to form a channel. The channel is self-aligned to the conductive line. The channel can be formed by etching the conductive line to a predetermined depth using a chemistry comprising an inhibitor to provide uniformity of etching independent of a crystallographic orientation. A capping layer to prevent electromigration is deposited on the recessed conductive line in the channel. The channel is configured to contain the capping layer within the width of the conductive line.

主权项

1. A method to manufacture an electronic device, comprising:
recessing at least one conductive line in a dielectric layer over a substrate to form a channel comprising a dielectric sidewall using a first chemistry comprising between about 0.1% to about 70% by mass of an etchant, between about 0.1% to about 10% by mass of an oxidizer, between about 50 ppm to about 1% by mass of an inhibitor and between about 1% to about 60% by mass of a solvent to provide an etching uniformity independent of a crystallographic orientation; and depositing a capping layer on the recessed conductive line and on the dielectric sidewall of the channel to prevent electromigration.