发明名称 Protecting layer in a semiconductor structure
摘要 A semiconductor structure comprises a dielectric layer, a conduction piece, a first metal piece, a first protecting layer, and a second protecting layer. The conduction piece is surrounded by electrical materials of the dielectric layer. The first metal piece is over the dielectric layer and is in contact with the conduction piece. The first protecting layer covers dielectric materials of the dielectric layer that are not covered by the first metal piece. The second protecting layer is over the first protecting layer.
申请公布号 US9373579(B2) 申请公布日期 2016.06.21
申请号 US201313787381 申请日期 2013.03.06
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Teng Chi-Lin;Chen Hai-Ching;Bao Tien-I
分类号 H01L23/58;H01L23/522;H01L23/532;H01L21/768 主分类号 H01L23/58
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A semiconductor structure comprising: a dielectric layer; a conduction piece surrounded by a dielectric material of the dielectric layer; a barrier layer separating the conduction piece from the dielectric material, the barrier layer extending above a topmost surface of the conduction piece; a first metal piece over the dielectric layer and in contact with the conduction piece; a first protecting layer covering dielectric materials of the dielectric layer that are not covered by the first metal piece and extending along a top surface and sidewalls of the first metal piece; and a second protecting layer over the first protecting layer, wherein the first protecting layer extends along the top surface and sidewalls of the first metal piece and the second protecting layer extends along the first protecting layer over the top surface and sidewalls of the first metal piece.
地址 Hsin-Chu TW